Calculate the mobility and carrier concentration of the carriers. The Hall coefficient (R H) of a semiconductor is 3.22 × 10 −4 m 3 C −1. Given the mobility of electrons ( μ n ) is 0.21m 2/V-s.Ĥ. At 300 K, find the diffusion coefficient of electrons in silicon. Calculate the number of donor atoms per m 3 of n-type material having resistivity of 0.25 Ω-m, the mobility of electrons is 0.3 m 2/V-s.ģ. The conductivity of an intrinsic semiconductor (σ i) = n i eĢ. The mobility of holes ( μ p) = 0.20 m 2/V-s Mobility of electrons ( μ n) = 0.40 m 2/V-s Intrinsic concentration ( n i) = 2.5 × 10 19/m 3 The mobilities of electrons and holes are 0.40 m 2/ V-s and 0.20 m 2/ V-s. Find the resistivity of an intrinsic semiconductor with intrinsic concentration of 2.5 × 10 19 per m 3.
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